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Title: Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics
Authors: Lucovsky, G. ×
Zhang, Y.
Luning, J.
Afanas'ev, Valeri
Stesmans, Andre
Zollner, S.
Tryoso, D.
Rogers, B. R.
Whitten, J. L. #
Issue Date: Jun-2005
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:80 issue:1-4 pages:110-113
Abstract: Chemically pure thin films of HfO2, as well as other transition metal and rare earth elemental and complex oxides, e.g., LaScO3 and LaAlO3, are nanocrystalline as-deposited. The local bonding environments of the transition and rare earth atoms are distorted with respect to ideal octahedral or cubic bonding, and degeneracies of the respective band edge d-states are completely removed by Jahn-Teller (J-T) distortions. Spectroscopic studies have revealed these J-T term splittings, and also a band edge localized state which is assigned to an electronically-active bonding defect at nanocrystalline grain boundaries.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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