ITEM METADATA RECORD
Title: Model for NBTI in p-MOSFETs with ultrathin nitrided gate oxides
Authors: Houssa, Michel
Parthasarathy, C.R.
Huard, V
Revil, N
Vincent, E
Autran, J-L #
Issue Date: 2002
Publisher: IEEE
Conference: IEEE International Integrated Reliability Workshop location:Lake Tahoe, USA date:21-24 october 2002
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Semiconductor Physics Section
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science