|ITEM METADATA RECORD
|Title: ||Model for NBTI in p-MOSFETs with ultrathin nitrided gate oxides|
|Authors: ||Houssa, Michel|
Autran, J-L #
|Issue Date: ||2002 |
|Conference: ||IEEE International Integrated Reliability Workshop location:Lake Tahoe, USA date:21-24 october 2002|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Semiconductor Physics Section|
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