Title: Observation of P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance
Authors: ClĂ©mer, Katrijn ×
Stesmans, Andre
Afanas'ev, Valeri #
Issue Date: Apr-2007
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:90 issue:14 pages:1-3
Article number: 142116
Abstract: Electron spin resonance analysis has detected a P-donor related point defect in nanometer-thick HfO2 films on (100)Si after annealing in the range of 500-900 degrees C. Based on the principal g matrix (axial; g(parallel to)=1.9965; g(perpendicular to)=1.9975) and hyperfine tensor values (A(1)=1425 +/- 10 G, A(2)=1245 +/- 10 G, and A(3)=1160 +/- 10 G) inferred from consistent K- and Q-band spectrum simulations, the center is assigned to a P-2-type defect-a P substituting a Hf atom-similar to P-2 in silica, where the unpaired spin is strongly localized on the P atom. The annealing impact is linked to the onset of crystallization enabling substitutional positioning of the P impurities. The centers may act as detrimental charge trapping sites. (c) 2007 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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