Title: Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
Authors: O'Sullivan, Barry
Mitsuhashi, Riichirou
Pourtois, Geoffrey
Aoulaiche, Marc
Houssa, Michel
Van der Heyden, Nikolaas
Schram, Tom
Harada, Yoshinao
Groeseneken, Guido
Absil, Philippe
Biesemans, Serge
Nakabayashi, Takashi
Ikeda, Atsushi
Niwa, Masaaki #
Issue Date: Aug-2008
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:104 issue:4 pages:1-7
Article number: 044512
Abstract: A significant difference in the magnitude of the threshold voltage (V,) reduction achieved by lanthanum oxide (La2O3) incorporation in ultra-thin dielectrics is observed for TaCx and TaCxNy electrodes. This is explained by dielectric consumption resulting from the thermodynamically unstable TaCx, electrode, which gives rise to electrically active oxygen vacancies in the high-permittivity dielectric. We report extensively on the presence and origins of an aberrant negative V, shift during positive bias temperature instability stressing and, conversely, a positive shift during negative bias temperature instability stressing for La2O3 capped HfSiON dielectrics observed for TaCx electroded films, not seen for the TaCxNy case. Although, oxygen vacancies are inherent due to the differences in electronic configuration between lanthanum and hafnium, this effect is exacerbated by the electrode instability, which is reflected in the V, dependence. (C) 2008 American Institute of Physics.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
Electrical Engineering - miscellaneous
# (joint) last author

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