Title: Passivation of Ge(100)/GeO2/high-k gate stacks using thermal oxide treatments
Authors: Bellenger, Florence ×
Houssa, Michel
Delabie, Annelies
Afanas'ev, Valeri
Conard, T.
Caymax, M.
Meuris, M.
De Meyer, K.
Heyns, Marc #
Issue Date: 2008
Publisher: Electrochemical Society
Series Title: Journal of the Electrochemical Society vol:155 issue:2 pages:G33-G38
Abstract: The physical and electrical properties of Ge/GeO2/high-kappa gate stacks, where the GeO2 interlayer is thermally grown in molecular oxygen, are investigated. The high-kappa layer (ZrO2, HfO2, or Al2O3) is deposited in situ on the GeO2 interlayer by atomic layer deposition. Detailed analysis of the capacitance-voltage and conductance-frequency characteristics of these devices provides evidence for the efficient passivation of the Ge (100) surface by its thermal oxide layer. A larger flatband voltage hysteresis is observed in HfO2-based gate stacks, as compared to Al2O3 gate stacks, which is possibly related to the more pronounced intermixing observed between the HfO2 and GeO2. (c) 2007 The Electrochemical Society.
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Department of Materials Engineering - miscellaneous
Semiconductor Physics Section
× corresponding author
# (joint) last author

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