Title: Structural inhomogeniety and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon
Authors: Afanas'ev, Valeri ×
Stesmans, Andre
Revesz, A. G.
Hughes, H. L. #
Issue Date: 1997
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:82 pages:2184-2199
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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