Title: Electron spin resonance observation of P-associated defect in HfO2 films on (100)Si
Authors: Stesmans, Andre ×
Clemer, K.
Afanas'ev, Valeri #
Issue Date: Sep-2007
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:84 issue:9-10 pages:2358-2361
Abstract: We report on the observation by electron spin resonance of P-related point defects in nm-thick HfO2 films on (100)Si-an oxide prominent in current high-K insulator research. Based on the principal g matrices and hyperfine tensors inferred from consistent K and Q-band spectra simulations and comparison with established P-associated defects in silica, the center is assigned to a P-2-type defect -a P substituting a Hf atom. The center is observed in the monoclinic phase of the HfO2 oxide with the impaired electron strongly localized on the P atom. Within the concern about dopant penetration out of Si into the high-K layers on top, identification of the dopant-associated defects in the latter appears crucial to which the present basic results provide fundamental access. The centers may operate as detrimental charge trapping sites.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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