Title: Strontium hafnate films deposited by physical vapor deposition
Authors: McCarthy, I. ×
Augustin, M. P.
Shamuilia, Sheron
Stemmer, S.
Afanas'ev, Valeri
Campbell, S. A. #
Issue Date: Dec-2006
Publisher: Elsevier Sequoia
Series Title: Thin Solid Films vol:515 issue:4 pages:2527-2530
Abstract: Strontium hafnate films are predicted to have desirable properties for use as a high-permittivity gate insulator. Such a film is of extreme interest to the scaling of Metal Oxide Semiconductor (MOS) transistors. Thin films of strontium hafnate have been prepared by cosputtering of Hf and SrO2, Strontium rich films appear to resist crystallization up to temperatures of 1000 degrees C, although high resolution electron microscopy suggests that nanocrystals form after high temperature annealing. Early measurements of MOS capacitors indicate a permittivity of approximately 35 and a lowest bandgap of about 4.4 eV (c) 2006 Elsevier B.V All rights reserved.
ISSN: 0040-6090
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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