Title: Model for NBTI in pMOSFETs with ultrathin gate oxide layers: comparison between electron and hole injection
Authors: Houssa, Michel
Aoulaiche, Marc
Autran, J-L #
Issue Date: 2003
Publisher: IEEE
Conference: IEEE SISC edition:34th location:Washington DC date:4-6 december 2003
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:Semiconductor Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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