Title: Increase in the oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface
Authors: Rozen, J. ×
Dhar, S.
Dixit, S. K.
Afanas'ev, Valeri
Roberts, F. O.
Dang, H. L.
Wang, S.
Pantelides, S. K.
Williams, J. R.
Feldman, L. C. #
Issue Date: Jun-2008
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:103 issue:12 pages:1-5
Article number: 124513
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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