Title: Amorphous lanthanum lutetium oxide thin films as alternative high-k gate dielectric
Authors: Lopes, J. M. J. ×
Roeckrath, M.
Heeg, T.
Rije, E.
Schubert, J.
Mantl, S.
Afanas'ev, Valeri
Shamuilia, Sheron
Stesmans, Andre
Jia, Y.
Schlom, D. G. #
Issue Date: Nov-2006
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:89 issue:22 pages:1-3
Article number: 222902
Abstract: Lanthanum lutetium oxide thin films were grown on (100) Si by pulsed laser deposition. Rutherford backscattering spectrometry, atomic force microscopy, x-ray diffraction, and x-ray reflectometry were employed to investigate the samples. The results indicate the growth of stoichiometric and smooth LaLuO3 films that remain amorphous up to 1000 degrees C. Internal photoemission and photoconductivity measurements show a band gap width of 5.2 +/- 0.1 eV and symmetrical conduction and valence band offsets of 2.1 eV. Capacitance and leakage current measurements reveal C-V curves with a small hysteresis, a dielectric constant of approximate to 32, and low leakage current density levels. (c) 2006 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science