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Title: Band alignment batween (100)Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces
Authors: Afanas'ev, Valeri ×
Stesmans, Andre
Edge, L. F.
Schlom, D. G.
Heeg, T.
Schubert, J. #
Issue Date: Jan-2006
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:88 issue:3 pages:1-3
Article number: 032104
Abstract: Incorporation of a similar to 1-nm-thick SiOx interlayer is found to have little effect on the band alignment between a (100) Si substrate and amorphous LaAlO3, LaScO2, and Sc2O3 insulators. All of these materials are found to give the same band offsets irrespective of differences in their composition, even when contacting Si directly. This suggests that the bulk electron states and properties of the semiconductor and insulator layer play a much more important role in determining the band lineup at the interface than any dipoles related to particular bonding configurations encountered in the transition region between Si and these oxides. (c) 2006 American Institute of Physics.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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