Title: Comment on "Reduction of interface state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing"
Authors: Afanas'ev, Valeri ×
Stesmans, Andre
Bassler, M.
Pensl, G.
Schulz, M. J. #
Issue Date: 2001
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:78 issue:25 pages:4043-4044
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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