Title: Control of the flatband voltage of 4H-SiC Metal-Oxide-Semiconductor (MOS) capacitors by co-implantation of nitrogen and aluminum
Authors: Frank, T. ×
Beljakova, S.
Pensl, G.
Kimoto, T.
Afanas'ev, Valeri #
Issue Date: 2007
Publisher: Trans Tech Publications
Host Document: Materials Science Forum vol:556-557 pages:555-560
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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