Title: Electronic strusture of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
Authors: Afanas'ev, Valeri ×
Stesmans, Andre
Delabie, Annelies
Bellenger, Florence
Houssa, Michel
Meuris, Marc #
Issue Date: Jan-2008
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:92 issue:2 pages:1-3
Article number: 022109
Abstract: Analysis of internal photoemission and photoconductivity in Ge/thermal germanium oxide/high-dielectric constant oxide (HfO2,Al2O3) structures reveals that the bandgap of the germanium oxide interlayer is significantly lower (4.3 +/- 0.2 eV) than that of stiochiometric GeO2 (5.4-5.9 eV). As a result, the conduction and valence band offsets at the interface appear to be insufficient to block electron and hole injection leading to significant charge trapping in the GeOx/high-kappa oxide stack. Formation of a hydroxyl-rich Ge oxide phase is suggested to be responsible for the modification of the oxide properties. (c) 2008 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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