Materials science in semiconductor processing vol:7 pages:185-189
Energy distributions of interface states in (100)Si/HfO2 entities were determined using capacitance-voltage measurements on structures with the periphery of the metal electrode switched to inversion by controlled application of corona discharge. This method was applied in combination with ac conductance spectroscopy to assess (100)Si/HfO2 interface traps. The significant impact of the HfO2 deposition process on the interface trap density is revealed. The latter includes both the enhancement of the Si-dangling bond defect (P-b0 centers) density and an additional contribution of insulator-related traps in samples deposited from a nitrogen-containing precursor. (C) 2004 Elsevier Ltd. All rights reserved.