Title: Interface state energy distribution in (100)Si/HfO2
Authors: Fedorenko, Y. ×
Truong, L.
Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Aug-2004
Publisher: Elsevier sci ltd
Series Title: Materials science in semiconductor processing vol:7 pages:185-189
Abstract: Energy distributions of interface states in (100)Si/HfO2 entities were determined using capacitance-voltage measurements on structures with the periphery of the metal electrode switched to inversion by controlled application of corona discharge. This method was applied in combination with ac conductance spectroscopy to assess (100)Si/HfO2 interface traps. The significant impact of the HfO2 deposition process on the interface trap density is revealed. The latter includes both the enhancement of the Si-dangling bond defect (P-b0 centers) density and an additional contribution of insulator-related traps in samples deposited from a nitrogen-containing precursor. (C) 2004 Elsevier Ltd. All rights reserved.
ISSN: 1369-8001
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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