Title: Interace state density in ion-implanted 6H-SiC/SiO2 MOS structures
Authors: Bassler, M. ×
Afanas'ev, Valeri
Pensl, G. #
Issue Date: 1998
Publisher: Trans Tech Publications
Series Title: Materials Science Forum vol:264-2 pages:861-864
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science