|ITEM METADATA RECORD
|Title: ||Probing point defects and traps in stacks of ultrathin hafnium oxides on (100)Si by electron spin resonance: Interfaces and N incorporation|
|Authors: ||Stesmans, Andre|
|Issue Date: ||2006 |
|Publisher: ||Springer Verlag|
|Host Document: ||Defects in high-k gate dielectric stacks pages:215-226|
|Publication status: ||published|
|KU Leuven publication type: ||IHb|
|Appears in Collections:||Semiconductor Physics Section|
|Files in This Item:
There are no files associated with this item.
Request a copy
All items in Lirias are protected by copyright, with all rights reserved.