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Title: Probing point defects and traps in stacks of ultrathin hafnium oxides on (100)Si by electron spin resonance: Interfaces and N incorporation
Authors: Stesmans, Andre
Afanas'ev, Valeri
Issue Date: 2006
Publisher: Springer Verlag
Host Document: Defects in high-k gate dielectric stacks pages:215-226
ISBN: 978-1-4020-4365-9
Publication status: published
KU Leuven publication type: IHb
Appears in Collections:Semiconductor Physics Section

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