Growth of dysprosium-, scandium-, and hafnium-based third generation high-kappa dielectrics by atomic vapor deposition
Adelmann, Christoph × Lehnen, Peer Van Elshocht, Sven Zhao, Chao Brijs, Bert Franquet, Alexis Conard, Thierry Roeckerath, Martin Schubert, J. rgen Boissiere, Olivier Lohe, Christoph De Gendt, Stefan #
Wiley-v c h verlag gmbh
Chemical vapor deposition vol:13 issue:10 pages:567-573
Thin dysprosium-, scandium-, and hafnium-based oxide dielectric films are deposited by atomic vapor deposition (AVD) using tris(6-ethyl-2,2-dimethyl-3,5-decanedionato) dysprosium [Dy(EDMDD)(3)], tris(6-ethyl-2,2-dimethyl-3,5-decanedionato) scandium [Sc(EDMDD)(3)], and bis(tert-butoxide) bis(methoxymethyl propanoxide) hafnium [Hf(O'Bu)(2)(mmp)(2)] as precursors. Spectroscopic ellipsometry (SE), Rutherford backscattering (RBS) spectrometry, and X-ray photoemission spectroscopy (XPS) demonstrate good control of the thickness and composition of the films. In particular, ternary and quaternary oxide alloys of any desired composition are grown. X-ray diffraction (XRD) shows that the (DY0.5SC0.5)(2)O-3 films are amorphous as grown, whereas the (Dy0.5Hf0.5)(4)O-7 and (SC0.5Hf0.5)(4)O-7 films are crystalline. The crystal structures of DyHf1-xOy and ScxHf1-xOy change from monoclinic to cubic around x similar to 0.1.