ITEM METADATA RECORD
Title: Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks
Authors: Li, Zilan ×
Schram, Tom
Stesmans, Andre
Franquet, Alexis
Witters, Thomas
Pantisano, Luigi
Yamada, Naoki
Tsunoda, Takaaki
Hooker, Jacob
De Gendt, Stefan
De Meyer, Kristin #
Issue Date: Aug-2008
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:93 issue:8 pages:1-3
Article number: 083511
Abstract: It was found that applying a capping layer has an important impact on the work function (WF) of Mo gated metal-oxide semiconductor stacks. Before any postmanufacturing thermal treatment, uncapped Mo has a similar WF as one capped with a TaC layer. However, after forming gas anneal (FGA), the uncapped Mo gate exhibits a significantly higher WF than the TaC capped one does. This is understood as O incorporation during deposition, storage or FGA, and its subsequent piling up at the Mo/dielectric interface during FGA in the former case, which is an effect prevented by TaC capping. (C) 2008 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Associated Section of ESAT - INSYS, Integrated Systems
Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science