Title: Determination of Work Functions in the Ta1-xAlxNy/HfO2 Advanced Gate Stack Using Combinatorial Methodology
Authors: Chang, Kao-Shuo ×
Green, Martin L
Hattrick-Simpers, Jason R
Takeuchi, Ichiro
Suehle, John S
Celik, Ozgur
De Gendt, Stefan #
Issue Date: Oct-2008
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:55 issue:10 pages:2641-2647
Abstract: Combinatorial methodology enables the generation of comprehensive and consistent data sets, compared with the "one-composition-at-a-time" approach. We demonstrate, for the first time, the combinatorial methodology applied to the work function (Phi(m)) extraction for Ta1-xAlxNy alloys as metal gates on HfO2, for complementary metal-oxide-semiconductor applications, by automated measurement of over 2000 capacitor devices. Scanning X-ray microdiffraction indicates that a solid solution exists for the Ta1-xAlxNy libraries for 0.05 <= x <= 0.50. The equivalent oxide thickness maps offer a snapshot of gate stack thermal stability, which show that Ta1-xAlxNy alloys are stable up to 950 degrees C. The Phi(m) of the Ta1-xAlxNy libraries can be tuned as a function of gate metal composition over a wide (0.05 <= x <= 0.50) composition range, as well as by annealing. We suggest that Ta0.9Al0.1N1.24 gate metal electrodes may be useful for p-channel metal-oxide-semiconductor applications.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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