Title: Process induced sub-surface damage in mechanically ground silicon wafers
Authors: Yang, Yu ×
De Munck, Koen
Cotrin Teixeira, Ricardo
Swinnen, Bart
Verlinden, Bert
De Wolf, Ingrid #
Issue Date: Jul-2008
Publisher: Iop publishing ltd
Series Title: Semiconductor Science and Technology vol:23 issue:7
Article number: 75038
Abstract: Micro-Raman spectroscopy, scanning electron microcopy, atomic force microscopy and preferential etching were used to characterize the sub-surface damage induced by the rough and fine grinding steps used to make ultra-thin silicon wafers. The roughly and ultra-finely ground silicon wafers were examined on both the machined (1 0 0) planes and the cross-sectional (1 1 0) planes. They reveal similar multi-layer damage structures, consisting of amorphous, plastically deformed and elastically stressed layers. However, the thickness of each layer in the roughly ground sample is much higher than its counterpart layers in the ultra-finely ground sample. The residual stress after rough and ultra-fine grinding is in the range of several hundreds MPa and 30 MPa, respectively. In each case, the top amorphous layer is believed to be the result of sequential phase transformations (Si-I to Si-II to amorphous Si). These phase transformations correspond to a ductile grinding mechanism, which is dominating in ultra-fine grinding. On the other hand, in rough grinding, a mixed mechanism of ductile and brittle grinding causes multi-layer damage and sub-surface cracks.
ISSN: 0268-1242
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physical Metallurgy and Materials Engineering Section (-)
Department of Materials Engineering - miscellaneous
Electrical Engineering - miscellaneous
× corresponding author
# (joint) last author

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