ITEM METADATA RECORD
Title: Epitaxial germanium-on-insulator grown on (001) Si
Authors: Seo, Jin Won ×
Dieker, Ch.
Tapponnier, A.
Marchiori, Ch.
Sousa, M.
Locquet, Jean-Pierre
Fompeyrine, J.
Ispas, A.
Rossel, C.
Panayiotatos, Y.
Sotiropoulos, A.
Dimoulas, A. #
Issue Date: Sep-2007
Publisher: ELSEVIER SCIENCE BV
Series Title: Microelectronic Engineering vol:84 issue:9-10 pages:2328-2331
Conference: date:Ecole Polytech Fed Lausanne, Inst Phys Complex Matter, CH-1015 Lausanne, Switzerland; IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland; Natl Ctr Sci Res Demokritos, Athens 15310, Greece
Abstract: We have grown for the first time (001)-oriented Germanium on (001) Si by using a perovskite oxide as an insulating epitaxial template. The full structures were grown by molecular beam epitaxy. We could successfully demonstrate a fully epitaxial approach to integrate a Gen-nanium-on-insulator (GOI) structure on Si wafers.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Physical Metallurgy and Materials Engineering Section (-)
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
pub04494.pdfMain article Published 4862KbAdobe PDFView/Open Request a copy

These files are only available to some KU Leuven Association staff members

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science