Title: Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric
Authors: Mavrou, G. ×
Galata, S.F.
Sotiropoulos, A.
Tsipas, P.
Panayiotatos, Y.
Dimoulas, A.
Evangelou, E.K.
Seo, Jin Won
Dieker, Ch. #
Issue Date: Sep-2007
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:84 issue:9-10 pages:2324-2327
Abstract: In this work, we investigate La2O3 as a gate dielectric candidate for Ge devices, using metal-insulator-semiconductor (MIS) structures. When the deposition temperature increases, the electrical characteristics improve with regard to dispersion in accumulation, hysteresis, stretch out, leakage current and interface state density D-it. By analyzing the CV data for films with different oxide thickness we find that the dielectric constant of La2O3 has a medium k-value of about 11. The same data indicate that there is no interfacial layer, which is confirmed by high resolution transmission electron microscopy (HRTEM) observations. These results suggest that a strong reaction with the Ge substrate may take place so that a La-Ge-O compound may form over the entire film thickness reducing the k-value. This reaction layer could be responsible for the reduction of Dit indicating good passivating properties. However, it may limit gate oxide scaling in future Ge MOS devices.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physical Metallurgy and Materials Engineering Section (-)
× corresponding author
# (joint) last author

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