|ITEM METADATA RECORD
|Title: ||Defect generation in ultrathin high permittivity gate dielectric layers|
|Authors: ||Houssa, Michel|
Heyns, MM #
|Issue Date: ||2001 |
|Host Document: ||International workshop on device technology: alternatives to SiO2 as gate dielectric for future Si-based microelectronics (Porto Alegre, Brazil, 2001)|
|Conference: ||International Workshop on Device Technology edition:1 location:Brazil date:3-5 september 2001|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Semiconductor Physics Section|
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