Title: Coulomb effect on doping in amorphous semiconductors - art. no. 081202
Authors: Arkhipov, VI ×
Emelianova, EV
Adriaenssens, Guy #
Issue Date: Feb-2001
Publisher: Published for the American Physical Society by the American Institute of Physics
Series Title: Physical Review B, Condensed Matter vol:6308 issue:8 pages:1202,NIL-1202,NIL
Abstract: Traditionally, the low doping efficiency in alpha -Si:H has been explained by the argument that dopant atoms are incorporated into under- or over-coordinated sites and, therefore, inert in such configurations. However, recent molecular dynamic simulations proved that this view is not generally correct. In the present paper we suggest a purely electronic analytic model explaining the low doping efficiency in amorphous semiconductors. The model shows that, in a random network of localized states, the Coulomb interaction between ionized dopant atoms and the resulting localized charge carriers leads to changes in the electronic density-of-states (DOS) distribution which counter the intended shift of the Fermi-level position
ISSN: 0163-1829
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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