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Title: Dissociation kinetics of hydrogen-passivated Pb defects at the (111)Si/SiO2 interface
Authors: Stesmans, Andre #
Issue Date: 1999
Host Document: 30th IEEE semiconductor interface specialists conference, Charleston, South Carolina, USA, 2-5/12/1999
Conference: 30th IEEE semiconductor interface specialists conference location:30th IEEE semiconductor interface specialists conference, Charleston, South Carolina, USA date:2-5/12/1999
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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