Title: Field dependence of the hole transit-time dispersion in As-Cl stabilized amorphous selenium X-ray photoconductors
Authors: Kasap, SO ×
Haugen, C
Polischuk, B
Emelianova, Evguenia
Arkhipov, VI #
Issue Date: Jan-2001
Series Title: Journal of Imaging Science and Technology vol:45 issue:1 pages:30-36
Abstract: The tail region of the photocurrent transient observed in the conventional time-of-flight measurements has been experimentally studied as a function of the applied field and sample thickness for amorphous selenium stabilized with 0.2-0.3% As alloying and similar to 10 ppm Cl doping (stabilized a-Se). The stabilized a-Se films used in the present study were typical x-ray photoconductars for use in x-ray imaging with a detector thickness in the range of 133-425 mum. Dispersions arising from the mutual Coulombic repulsion of charge carriers was found to give a noticable contribution to the total spread of the carrier packet even at relatively low injection level and extrapolating this function to zero injected charge. The hole transit time dispersion, Deltat(TOF) reveals a power law electric field (F) dependence of the form Deltat(TOF) similar to F-n where n approximate to 1. It is shown that the observed dispersion cannot be interpreted on the basis of the multiple trapping model nor conventional diffusion while the concept of charge carrier transport within a random potential landscape allows one to explain the observed ed field dependence of the hole photocurrent transients in terms of a Gaussian distribution of the effective carrier drift mobilities in which the normalized mobility spread Delta mu/mu is 0.083 - 0.042
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Molecular Imaging and Photonics
× corresponding author
# (joint) last author

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