Title: Electronic properties of SiO2/SiC interfaces
Authors: Afanas'ev, Valeri #
Issue Date: 1999
Series Title: Microelectronic Engineering vol:48 issue:1-4 pages:241-248
Abstract: Oxidation of silicon carbide (SiC) provides a possibility to combine the unique electronic and thermal properties of this semiconductor with the surface passivation attained by the natural insulating oxide SiO2, in a similar way as it is done for silicon. However, the electron transport at the oxidized SiC surfaces is deteriorated by the SiC/oxide interface imperfections much more strongly than in the Si/SiO2 structures. Two main contributions to the enhanced SiC/SiO2 defect densities are revealed, including the carbon-related states and the near-interfacial oxide defects with energy levels in the SiC bandgap. These defects can be formed not only during the oxide formation or annealing, but, also, as a result of charge injection at the SiC/oxide interface which stresses the importance of the degradation effects in the SiC electronic devices
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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