Title: Degradation of 6H-SiC MOS capacitors operated at high temperatures
Authors: Bassler, M
Afanas'ev, Valeri
Pensl, G
Schulz, M #
Issue Date: 1999
Series Title: Microelectronic Engineering vol:48 issue:1-4 pages:257-260
Abstract: 6H-SiC MOS capacitors were operated at temperatures above 600K under negative bias. Enhancement of energetically shallow and deep interface states at n/p-type SiC/SiO2 structures and of
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Physics and Astronomy - miscellaneous
# (joint) last author

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