|ITEM METADATA RECORD
|Title: ||Degradation of 6H-SiC MOS capacitors operated at high temperatures|
|Authors: ||Bassler, M|
Schulz, M #
|Issue Date: ||1999 |
|Series Title: ||Microelectronic Engineering vol:48 issue:1-4 pages:257-260|
|Abstract: ||6H-SiC MOS capacitors were operated at temperatures above 600K under negative bias. Enhancement of energetically shallow and deep interface states at n/p-type SiC/SiO2 structures and of|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Semiconductor Physics Section|
Physics and Astronomy - miscellaneous
|Files in This Item:
There are no files associated with this item.
Request a copy
All items in Lirias are protected by copyright, with all rights reserved.
© Web of science