Title: Distribution of gap states in amorphous selenium thin films
Authors: Song, HZ
Adriaenssens, Guy
Emelianova, EV
Arkhipov, VI #
Issue Date: 1999
Series Title: Physical review B vol:59 issue:16 pages:10607-10613
Abstract: Post-transit photocurrent analysis, based on the time-of-flight transient photoconductivity technique, was successfully carried out for a series of amorphous selenium (a-Se) thin films. The method allows a determination of the density of gap states beyond the shallow tail states from the emission-dominated post-transit currents. Prominent hole and electron traps were resolved some 0.4-0.5 eV above the valence-band edge and 0.55-0.65 eV below the conduction-band edge. These two traps represent the thermally accessible levels of the D+ and D- intrinsic negative-U defects in a-Se. The tail end of the transient currents and an apparent temperature dependence below 0 degrees C of the resolved densities can be interpreted as indications for a further set of hole and electron traps close to the Fermi level, but experimental uncertainties and a simulation of the temperature dependence show that such assignment remains questionable. [S0163-1829(99)11615-1]
ISSN: 0163-1829
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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