Title: Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface
Authors: Stesmans, Andre
Nouwen, Bert #
Issue Date: 1999
Publisher: Elsevier science sa
Series Title: Materials science and engineering B: Solid state materials or advanced technology vol:58 issue:1-2 pages:52-55
Abstract: Direct experimental evidence for the dipolar interactions within the two-dimensional P-b defect system at the Si/SiO2 interface is provided by the observation of anisotropy in the electron spin resonance spectra. This observation was enabled through distinct interface degradation by post-oxidation annealing in H-2, leading to enhanced P-b density. The data are interpreted within the framework of a computational model based on the magnetostatic approximation of the local field. The results suggest P-b defects to exhibit a self-avoiding behaviour and confirm their occurrence as related to the release of interface stress. (C) 1999 Elsevier Science S.A. All rights reserved
ISSN: 0921-5107
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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