Title: Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H
Authors: Brinza, Monica
Adriaenssens, Guy
Iakoubovskii, Konstantin
Stesmans, Andre
Kessels, WMM
Smets, AHM
van de Sanden, MCM #
Issue Date: 2002
Publisher: Elsevier science bv
Series Title: Journal of Non-Crystalline Solids vol:299-302 pages:420-424
Abstract: Time-of-flight (TOF) photocurrent investigations of hydrogenated amorphous silicon (a-Si:H) layers produced by means of an expanding thermal plasma (ETP) reveal a hole drift mobility that is. for depositions near 450 degreesC, consistenly one order of magnitude higher than the corresponding mobility in standard PECVD samples. Electron drift mobilities and mutau products do not show such differences. The electronic density of states contains a prominent band of deep traps and the materials show evidence for non-amorphous inclusions. (C) 2002 Elsevier Science B.V. All rights reserved.
ISSN: 0022-3093
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science