|ITEM METADATA RECORD
|Title: ||Contributions to the density of interface states in SiC MOS structures|
|Authors: ||Afanas'ev, Valeri|
|Issue Date: ||2003 |
|Host Document: ||Silicin Carbide: Review of Major Recent Advances pages:343-371|
|Description: ||Contribution to the book 'Silicon Carbide'|
|Publication status: ||published|
|KU Leuven publication type: ||IHb|
|Appears in Collections:||Semiconductor Physics Section|
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