|ITEM METADATA RECORD
|Title: ||Band alignment at the interfaces of Si and metals with high-permittivity insulating oxides|
|Authors: ||Afanas'ev, Valeri|
|Issue Date: ||2003 |
|Publisher: ||Institute of Physics|
|Host Document: ||High-k gate dielectrics pages:217-250|
|Description: ||Contribution to the book 'High k Gate Dielectrics'|
|ISBN: ||7 5030906 7|
|Publication status: ||published|
|KU Leuven publication type: ||IHb|
|Appears in Collections:||Semiconductor Physics Section|
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