Title: Annealing induced degradation of thermal SiO_2 on (100)Si: point defect generation
Authors: Stesmans, Andre
Pierreux, Dieter
Afanas'ev, Valeri #
Issue Date: 2003
Publisher: Taylor & francis ltd
Series Title: Radiation Effects & Defects in Solids vol:158 pages:419-425
Abstract: The structural degradation of thermal SiO2 on (100)Si under isochronal post oxidation vacuum annealing (POVA) has been probed by electron spin resonance (ESR). The degradation process, studied in the range T-an = 950-1250degreesC, is established as intense point defect generation including E'(gamma) E'(delta), EX and the elusive predominant degradation center S. Thermally activated generation is revealed over broad T-an ranges for the two most populous defects, S and E'(gamma), with a common activation energy similar to1.6 eV. Depth profiling after heating at 1200degreesC shows that the S centers predominantly reside near the oxide borders, generally in anticorrelation with the E. distribution. The S center susceptibility has been inferred from conventional ESR signal intensity monitoring as well as from revealed anisotropic demagnetisation effects. It is found Curie-Weiss type with critical temperature of similar to1.3 K. Newly observed weak hyperfine structure may comply with the S center being an E'-Iike defect.
ISSN: 1042-0150
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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