Title: Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation
Authors: Ciobanu, F ×
Pensl, G
Afanas'ev, Valeri
Schöner, A #
Issue Date: 2005
Publisher: Trans Tech Publications
Series Title: Materials Science Forum vol:483 pages:693-696
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science