Title: Valance-band electron-tunneling measurement of the gate work function: Application to the high-k/polycrysstalline-silicon interface
Authors: Pantisano, L ×
Afanas'ev, Valeri
Pourtois, G
Chen, PJ #
Issue Date: Sep-2005
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:98 issue:5 pages:053712-1-053712-8
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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