Title: Luminescence excitation spectra in diamond
Authors: Iakoubovskii, Konstantin
Adriaenssens, Guy #
Issue Date: 2000
Series Title: Physical review B vol:61 issue:15 pages:10174-10182
Abstract: Photoluminescence excitation (PLE) spectra, measured at varying temperatures and for different luminescent energies, are applied systematically to the study of defects in Ia, Ib, IIb, and chemical-vapor-deposired (CVD) diamond. It is shown that the green luminescent band in CVD diamond films consists of two distinct components. The first one is attributed to recombination in the amorphous carbon phase. The second component increases with surface hydrogenation in CVD films, but an analogous band remains almost unchanged in Ib diamond. This band is ascribed to the donor-acceptor pair recombination. The phatoionization threshold for transitions from the valence band to the donor level is determined as 3.25 eV. Based on PLE measurements the broad blue band is assigned to the vibronic band of a dislocation-related center with the ground state position in the range from E-V to E-V + 0.37 eV. A series of undocumented photoluminescence (PL) lines at 1.81, 1.84, 1.91, 2.02, 2.1, and 2.2 eV is characterized by PL and PLE techniques as belonging to radiative transitions from different excited states to the same ground state of a divacancy-related center. Oscillatory behavior in the PLE spectra from CVD diamond is used to deduce E-C - 2.24 eV and E-C - 2.05 eV as the optical ionization thresholds to the conduction band for the divacancy-related and the 1.68 eV centers, respectively. Record 11 of 18 - CC Search(R) 7 Editions 2ND Quarter
ISSN: 1098-0121
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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