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Title: Effects of Plasma Chemistry on Low-k Film Properties
Authors: Kim, Dongcham
Urbanowicz, Adam
Mannaert, Geert
Struf, Herbert
Boullart, Werner
Min, K. J.
Kang, C. J.
Moon, J.T
Baklanov, Mikhail #
Issue Date: Nov-2007
Conference: International Symposium on Dry Process - DPS edition:29 location:Tokyo, Japan date:13-14 November 2007
Abstract: Effects of C4F8/CF4 ratio and N2 on low-k film properties have been studied in order to minimize damage during low-k patterning. XPS results show that increasing C4F8/CF4 ratio deposits CxFy polymer on the low-k film, leading to hydrophobic pore sealing, and this is confirmed by less O-H peak increase and less carbon depletion in the FT-IR spectra. Skipping N2 from etch recipes stimulates CxFy polymer deposition and gives the lowest low-k damage. Application of highly polymerizing etching without N2 to patterned wafers and electrical evaluation are in progress to verify the above results. The results are also compared with plasma damage in typical strip plasmas. It is shown that degree of plasma damage is higher in H2-based and O2/SF6 plasmas in comparison with O2 and O2/CF4 plasmas
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:Molecular Design and Synthesis
# (joint) last author

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