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Title: Effect of Helium Plasma on Low-k damage during Dry Resist Strip
Authors: Urbanowicz, Adam
Shamiryan, Denis
Kim, Dongchan
Baklanov, Mikhail #
Issue Date: Sep-2007
Conference: International Workshop Plasma Etch and Strip in Microelectronics edition:1 location:Leuven date:10-11 September 2007
Abstract: Effect of He plasma dechuck step in a dry resist strip process is analyzed. It is demonstrated that UV radiation from He plasma during the dechuck step dissociates the adsorbed water molecules, which are formed during the preceding oxygen-plasma-based strip. A product of the water photolysis - oxygen radicals are detected as a source of light emission at 777 nm. The intensity the emission of electronically excited O* radicals correlates with degree of damage occurred during strip.
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:Molecular Design and Synthesis
# (joint) last author

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