International Workshop Plasma Etch and Strip in Microelectronics edition:1 location:Leuven date:10-11 September 2007
Effect of He plasma dechuck step in a dry resist strip process is analyzed. It is demonstrated that UV radiation from He plasma during the dechuck step dissociates the adsorbed water molecules, which are formed during the preceding oxygen-plasma-based strip. A product of the water photolysis - oxygen radicals are detected as a source of light emission at 777 nm. The intensity the emission of electronically excited O* radicals correlates with degree of damage occurred during strip.