Title: A 5.8 GHz 1 V linear power amplifier using a novel on-chip transformer power combiner in standard 90 nm CMOS
Authors: Haldi, Peter ×
Chowdhury, Debopriyo
Reynaert, Patrick
Liu, Gang
Niknejad, Ali M #
Issue Date: May-2008
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE journal of solid-state circuits vol:43 issue:5 pages:1054-1063
Abstract: A fully integrated 5.8 GHz Class AB linear power amplifier (PA) in a standard 90 nm CMOS process using thin oxide transistors utilizes a novel on-chip transformer power combining network. The transformer combines the power of four push-pull stages with low insertion loss over the bandwidth of interest and is compatible with standard CMOS process without any additional analog or RF enhancements. With a 1 V power supply, the PA achieves 24.3 dBm maximum output power at a peak drain efficiency of 27% and 20.5 dBm output power at the 1 dB compression point.
ISSN: 0018-9200
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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