Title: Damage reduction and sealing of low-k films by combined He and NH3 plasma treatment
Authors: Urbanowicz, Adam
Baklanov, M. R ×
Heijlen, J
Travaly, Y
Cockburn, A #
Issue Date: 2007
Publisher: Electrochemical soc inc
Series Title: Electrochemical and Solid-State Letters vol:10 issue:10 pages:G76-G79
Abstract: Modification of chemical vapor deposition low-k films upon sequential exposure to helium plasma and then ammonia plasma is characterized using various methods. The He plasma emits extreme ultraviolet (EUV) photons creating O-2 vacancies, which impacts surface reactive sites and induces localized chemical modifications in the first surface monolayers. The subsequent NH3 plasma treatment provides complete sealing of the low-k surface. The depth of the modification, which is a factor of merit of the sealing process, is limited because of the high absorption coefficient of silica-based low-k materials in the range of EUV emission. (C) 2007 The Electrochemical Society.
ISSN: 1099-0062
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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