High magnetic-field studies of the crossed-gap superlattice system inas/gasb
Nicholas, Rj × Dalton, Ksh Lakrimi, M Lopez, C Martin, Rw Mason, Nj Summers, Gm Sundaram, Gm Symons, Dm Walker, Pj Warburton, Rj Erements, Mi Barnes, Dj Miura, N Vanbockstal, L Bogaerts, R Herlach, Fritz #
Elsevier science bv
Physica b vol:184 issue:1-4 pages:268-276
A variety of optical and electrical studies are described for superlattices and heterostructures based on the materials system InAs/GaSb. The crossed-band-gap alignment of this system leads to a semimetal to semiconductor transition as a function of either superlattice period, magnetic field or pressure. Cyclotron resonance is studied for both electrons and holes, and the electron resonance is observed in the magnetic field range where the field induced band crossing occurs. Studies of the pressure dependence of the band offset show that both (1 1 1)A and (1 0 0) oriented structures have a pressure coefficient of 10.7 meV/kbar, but the band crossing at zero pressure is larger for the (1 1 1)A case. Compensated quantum Hall plateaux are observed at high magnetic fields and low temperatures, and large oscillatory features are observed in the Hall voltage under a range of conditions. In very high fields we have observed the zero-resistance Hall plateaux occurring due to total compensation of the electron and hole states.