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Title: Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth
Authors: Iacopi, F. ×
Vereecken, Philippe
Schaekers, M.
Caymax, M.
Moelans, Nele
Blanpain, Bart
Richard, O.
Detavernier, C.
Griffiths, H. #
Issue Date: Dec-2007
Publisher: Iop publishing ltd
Series Title: Nanotechnology vol:18 issue:50
Article number: 505307 (7 pp)
Abstract: Au nanoparticles are efficient catalysts for the vapour-solid-liquid (VLS) growth of semiconductor nanowires, but Au poses fundamental reliability concerns for applications in Si semiconductor technology. In this work we show that the choice of catalysts for Si nanowire growth can be broadened when the need for catalytic precursor dissociation is eliminated through the use of plasma enhancement. However, in this regime the incubation time for the activation of VLS growth must be minimized to avoid burying the catalyst particles underneath an amorphous Si layer. We show that the combined use of plasma enhancement and the use of a catalyst such as In, already in a liquid form at the growth temperature, is a powerful method for obtaining Si nanowire growth with high yield. Si nanowires grown by this method are monocrystalline and generally oriented in the < 1 1 1 > direction.
ISSN: 0957-4484
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Chemical and Extractive Metallurgy Section (-)
Centre for Surface Chemistry and Catalysis
× corresponding author
# (joint) last author

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