Title: Growth of single unit-cell superconducting La2-xSrxCuO4 films
Authors: Rufenacht, A ×
Chappatte, P
Gariglio, S
Leemann, C
Fompeyrine, J
Locquet, Jean-Pierre
Martinoli, P #
Issue Date: 2003
Series Title: Solid-state electronics vol:47 issue:12 pages:2167-2170
Conference: date:Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland; IBM Corp, Div Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland; Univ Geneva, DPMC, CH-1211 Geneva, Switzerland
Abstract: We have developed an approach to grow high quality ultra-thin films of La2-xSrxCuO4 with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La1.9Sr0.1CuO4 film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO4 substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth lambda(ab)(0) = 535 nm. (C) 2003 Elsevier Ltd. All rights reserved.
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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