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Title: Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111)Si
Authors: Seo, Jin Won ×
Fompeyrine, J
Guiller, A
Norga, G
Marchiori, C
Siegwart, H
Locquet, Jean-Pierre #
Issue Date: 2003
Publisher: AMER INST PHYSICS
Series Title: Applied Physics Letters vol:83 issue:25 pages:5211-5213
Conference: date:Ecole Polytech Fed Lausanne, Inst Phys Complex Matters, CH-1015 Lausanne, Switzerland; IBM Res Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
Abstract: We have studied the growth of epitaxial La2Zr2O7 thin films on (111) Si. Although the interface structure can be strongly affected by the Si oxidation during the deposition process, epitaxial growth of La2Zr2O7 was obtained. A detailed study by means of transmission electron microscopy reveals two types of structures (pyrochlore and fluorite) with the same average chemical composition but strong differences in reactivity and interface formation. The structural complexity of the ordered pyrochlore structure seems to prevent excess oxygen diffusion and interfacial SiO2 formation. (C) 2003 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Physical Metallurgy and Materials Engineering Section (-)
× corresponding author
# (joint) last author

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