Title: Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity
Authors: Norga, GJ ×
Marchiori, C
Guiller, A
Locquet, Jean-Pierre
Rossel, C
Siegwart, H
Caimi, D
Fompeyrine, J
Conard, T #
Issue Date: 2005
Series Title: Applied Physics Letters vol:87 issue:26
Conference: date:IBM Res GMBH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland; IMEC, B-3001 Louvain, Belgium
Article number: 262905
Abstract: We use the reflection high-energy electron diffraction oscillation phase shift to monitor the stability of the Sr barrier, prepared by exposure of Si(100) to Sr at high temperatures, in situ during molecular beam epitaxy growth of (Ba,Sr)O on Si(100). Our results confirm that the deposition of additional metallic Sr at low temperature is essential for preventing the incorporation of the Sr termination layer in the (Ba,Sr)O layer during its growth, and for obtaining monolayer thin (Ba,Sr)O layers with good crystallinity and minimal density of interfacial Si-O bonds on Si(100). (c) 2005 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science