Title: Field-effect transistors with SrHfO3 as gate oxide
Authors: Rossel, C ×
Mereu, B
Marchiori, C
Caimi, D
Sousa, M
Guiller, A
Siegwart, H
Germann, R
Locquet, Jean-Pierre
Fompeyrine, J
Webb, D J
Dieker, Ch
Seo, Jin Won #
Issue Date: 2006
Series Title: Applied Physics Letters vol:89 issue:5
Conference: date:IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland; Ecole Polytech Fed Lausanne, Inst Phys Complex Matter, CH-1015 Lausanne, Switzerland; PSE, MosBeam Fdn, CH-1015 Lausanne, Switzerland
Article number: 053506
Abstract: The authors demonstrate that the compound SrHfO3 grown epitaxially on Si(100) by molecular-beam epitaxy is a potential gate dielectric to fabricate n- and p-metal-oxide semiconductor field-effect transistors with equivalent oxide thickness (EOT) below 1 nm. The electrical properties on capacitors and transistors show low gate leakage and good capacitance and I-V output characteristics. The lower electron and hole mobilities, which are strongly limited by charge trapping, nevertheless fit well with the general trend of channel mobility reduction with decreasing EOT. (c) 2006 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Physical Metallurgy and Materials Engineering Section (-)
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science