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Title: In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
Authors: Webb, D J ×
Fompeyrine, J
Nakagawa, S
Dimoulas, A
Rossel, C
Sousa, M
Germann, R
Alvarado, S F
Locquet, Jean-Pierre
Marchiori, C
Siegwart, H
Callegari, A
Kiewra, E
Sun, Yi
De Souza, J
Hoffmann, N #
Issue Date: 2007
Series Title: Microelectronic Engineering vol:84 issue:9-10 pages:2142-2145
Conference: date:IBM Res GmbH, Ruschlikon, Switzerland; IBM Japan Ltd, Tokyo Res Lab, Tokyo, Japan; Demokritos Natl Ctr Sci Res, GR-15310 Athens, Greece; IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA; DCA Instruments, Turku, Finland
Abstract: We report a study of MOS capacitors having a dielectric of HfO2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various surface-reconstructions. Interface state densities of about 1 x 10(12) eV(-1) cm(-2) have been obtained. Capacitors on the Ga-rich surface, measured with peripheral illumination, show signs of a possible inversion layer.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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